The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) within the Forschungsverbund Berlin e.V., is a leading international research institute that studies diode lasers, LEDs and microwave devices.
On the basis of III/V semiconductors, it researches and implements components and systems for applications in communications, traffic and production technology, medicine and biotechnology. It covers the entire value chain from design to ready-for-delivery systems.
The “GaN Microwave Devices Lab” is looking for an internship (Master/ Bachelor thesis) for optimizing Ohmic contacts for very high speed GaN-based transistors.
The quality of Ohmic contact directly influences the performance of GaN HEMTs for mm-wave applications. The contact resistance (Rc) and edge acuity are the main criteria for evaluating such contacts. Both parameters are limiting switching frequency and noise performance of the devices. Based on current FBH technology the contact resistance Rc can be as low as ~ 0.3 Ω/□. However, for further scaling of the transistors an Rc ≤ 0.1 Ω/□ is required.
In the proposed thesis a corresponding optimization of the Ohmic contacts is planned. We have considered a local doping of the source / drain transistor regions and a subsequent deposition of a suitable ohmic contact metal as an appropriate method for achieving the target.
The following subtasks are planned:
- Gaining insight into ohmic contact fabrication technology
- Characterization of fabricated ohmic contact structures, data analyses
- TCAD simulation of ohmic contacts
- Finally a physical / chemical understanding of ohmic contact formation is anticipated
The work will be performed under intensive scientific supervision.
Field of study:
Electrical engineering, physics, or related studies
Are you interested? Then we are looking forward to your online application. To do this, please click on "Apply online" and send us your complete application documents in this way.
For further information, please contact Mr. Hossein Yazdani,